@inproceedings{9f787a2e2bb94e628811b0c10a17f3b4,
title = "Development of high-throughput batch-type epitaxial reactor",
abstract = "Si/SiGe selective epitaxial growth is becoming a critical process step for ULSI fabrication on 65nm and beyond technologies with need for elevated source-drain or strained Si channel to enhance device performance. This paper reviews recent efforts to improve batch-type epitaxial reactors for high-volume device fabrication and shows recent progress in low-temperature Si/SiGe selective epi process. copyright The Electrochemical Society.",
author = "Y. Kunii and Y. Inokuchi and J. Wang and K. Yamamoto and A. Moriya and Y. Hashiba and H. Kurokawa and J. Murota",
year = "2006",
doi = "10.1149/1.2355879",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "841--847",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}