Development of high quality AlN epitaxial film for 2.4GHz front-end SAW matched filter

S. Tomabechi, K. Wada, S. Saigusa, H. Matsuhashi, H. Nakase, K. Masu, K. Tsubouchi

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

We have developed aluminum nitride (AlN) epitaxial growth technology using Knudsen pressure MO-CVD method. The thickness uniformity was ±1%. However groove-like cracks were formed on the surface of the AlN epitaxial film. AlN deposition on off-angle substrates and the AlN deposition at high temperature have been investigated for eliminating the cracks on the surface. AlN deposition on Al2O3 surface which is -4 degree off-angle from c'-axis has resulted in elimination of the cracks from the SEM (Scanning Electron Microscope) observations. The crack of AlN film deposited at a higher temperature of 1140°C/40mTorr is found to be completely eliminated on the whole 2″-φ wafer from the SEM and laser-scan microscope observations. The propagation loss has been evaluated from the characteristics of time domain impulse response of 2.4GHz matched filters fabricated on 2″-φ wafers. The propagation loss of crackless AlN films is drastically improved by one order compared with that of cracked AlN films.

本文言語English
ページ(範囲)263-267
ページ数5
ジャーナルProceedings of the IEEE Ultrasonics Symposium
1
出版ステータスPublished - 1999 12 1
イベント1999 IEEE Ultrasonics Symposium - Caesars Tahoe, NV, USA
継続期間: 1999 10 171999 10 20

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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