The high power terahertz (THz)-time domain spectroscopy (TDS) system has been designed based on S-band compact electron linac at Advanced Industrial Science and Technology (AIST). The THz pulse is expected to have the peak power of about 25 kW with frequency range 0.1-2 THz using the 40 MeV electron beam which has about 1 nC bunch charge with 300 fs bunch length (rms). The aptitude discussion of the EO sampling method with ZnTe crystal was accomplished to apply to our THz-TDS system. The preliminary experiment of the absorption measurements of P-PPV on the Si wafer has been successfully demonstrated using the 0.1 THz coherent synchrotron radiation (CSR) pulse and W-band rf detector. It is confirmed that the intense of the THz pulse is enough to perform the THz-TDS analysis of the sample on the Si wafer. In near future, the investigation of the un-researched materials will be started in the frequency range 0.1-2 THz with our high power THz-TDS system.
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