Development of evaluation method for estimating stress-induced change in drain current in deep-sub-micron MOSFETs

Yukihiro Kumagai, Hiroyuki Ohta, Hideo Miura, Akihiro Shimizu, Shiro Kamohara, Keiichi Maekawa

研究成果: Article査読

抄録

A method for predicting the change in the drain current of deep-sub-micron MOSFETs due to strain was developed. The change in MOSFET drain current can be explained as a linear function of normal strains. The strain sensitivities of the drain current of MOSFETs were clarified experimentally. The drain current of an N-MOSFET increases with increases in in-plane tensile strains and normal compressive strain. On the other hand, the drain current of a P-MOSFET increases with in-plane compressive strain parallel to the channel, and in-plane tensile strain perpendicular to the channel. It also increases with normal tensile strain. The predicted values agreed well with the measured ones. This method for predicting change in the drain current due to stress will help us to improve electronic performance of MOSFETs.

本文言語English
ページ(範囲)47-54
ページ数8
ジャーナルNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
72
1
DOI
出版ステータスPublished - 2006 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「Development of evaluation method for estimating stress-induced change in drain current in deep-sub-micron MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル