Development of annealing process for solution-derived high performance InGaZnO thin-film transistors

Kwan Soo Kim, Se Won Lee, Se Man Oh, Won Ju Cho

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Abstract The influences of the annealing process on solution-derived InGaZnO thin-film transistors (TFTs) were investigated. Operation characteristics of IGZO TFTs were obtained from high temperature processes: rapid thermal annealing (RTA) at 600 C and conventional thermal annealing (CTA) at 500 C. It is found that the RTA increases the on-current and off-current of TFTs. The CTA decreases off-current and improves the interfacial property. Meanwhile, a two-step annealing process, comprising RTA and CTA, increases on-current and decreases off-current and is considered as the optimal annealing procedure. Another two-step annealing process, comprising CTA and RTA, increases on-current but increases off-current, simultaneously.

本文言語English
ページ(範囲)811-815
ページ数5
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
178
12
DOI
出版ステータスPublished - 2013
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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