Abstract The influences of the annealing process on solution-derived InGaZnO thin-film transistors (TFTs) were investigated. Operation characteristics of IGZO TFTs were obtained from high temperature processes: rapid thermal annealing (RTA) at 600 C and conventional thermal annealing (CTA) at 500 C. It is found that the RTA increases the on-current and off-current of TFTs. The CTA decreases off-current and improves the interfacial property. Meanwhile, a two-step annealing process, comprising RTA and CTA, increases on-current and decreases off-current and is considered as the optimal annealing procedure. Another two-step annealing process, comprising CTA and RTA, increases on-current but increases off-current, simultaneously.
|ジャーナル||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版ステータス||Published - 2013|
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