Development of a high-frequency pulse laser irradiation system for repairing silicon wafers damaged by abrasive machining processes

Jiwang Yan, Seiya Muto, Tsunemoto Kuriyagawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

A four-axis numerically controlled precision stage equipped with a high-frequency nanosecond pulsed Nd:YAG laser system was developed for processing grinding-damaged silicon wafers. The resulting specimens were characterised using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam centre where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one-and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallising the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably smoothed.

本文言語English
ページ(範囲)175-189
ページ数15
ジャーナルInternational Journal of Abrasive Technology
3
3
DOI
出版ステータスPublished - 2010 7

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

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