Deuterium retention in tungsten and molybdenum

S. Nagata, K. Takahiro

研究成果: Article査読

43 被引用数 (Scopus)

抄録

Trapping of D atoms implanted in W and Mo single crystals was investigated in connection with the implantation-induced defects by using ion beam analysis techniques. The amount of the retained D atoms near the surface layer of the W crystal was higher than of the Mo crystal at a temperature range between 300 and 650 K. Depth profile studies of the retained D atoms and defects indicated that trapping of D atoms implanted in the W and the Mo crystal was associated with lattice distortion due to implantation-induced extended defects such as interstitial loops. The D atoms implanted in the W crystal were found to be located near the tetrahedral interstitial site, both in the implant surface layer and in the greater depth where few displacements were expected to be created by collisions.

本文言語English
ページ(範囲)1038-1042
ページ数5
ジャーナルJournal of Nuclear Materials
283-287
PART II
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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