Deterministic doping to silicon and diamond materials for quantum processing

Takahiro Shinada, Enrico Prati, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Fedor Jelezko, Junnichi Isoya

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

本文言語English
ホスト出版物のタイトル16th International Conference on Nanotechnology - IEEE NANO 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ888-890
ページ数3
ISBN(電子版)9781509039142
DOI
出版ステータスPublished - 2016 11 21
イベント16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
継続期間: 2016 8 222016 8 25

出版物シリーズ

名前16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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