Determination of electron escape depth in ultrathin silicon oxide

H. Nohira, H. Okamoto, K. Azuma, Y. Nakata, E. Ikenaga, K. Kobayashi, Y. Takata, S. Shin, T. Hattori

    研究成果: Article査読

    11 被引用数 (Scopus)

    抄録

    Using the high-brilliance synchrotron radiation at SPring-8, we determined the electron escape depths in approximately 1-nm -thick low-temperature oxide layers, which were formed on Si(100) at 300 °C using three kinds of atomic oxygen and that in approximately 1-nm -thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900 °C by measuring angle-resolved Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 18%-24% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 7% smaller than that in bulk Si O2.

    本文言語English
    論文番号081911
    ページ(範囲)1-3
    ページ数3
    ジャーナルApplied Physics Letters
    86
    8
    DOI
    出版ステータスPublished - 2005 2 21

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

    フィンガープリント

    「Determination of electron escape depth in ultrathin silicon oxide」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル