Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si xGe 1-x (0.93 < x < 0.96) single crystals

I. Yonenaga

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Undoped and impurity-doped single crystals of Si x Ge 1-x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin's curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.

本文言語English
ページ(範囲)315-318
ページ数4
ジャーナルJournal of Materials Science: Materials in Electronics
19
4
DOI
出版ステータスPublished - 2008 4月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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