Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

M. Kitamura; M. Kobayashi; E. Sakai; R. Takahashi; M. Lippmaa; K. Horiba; H. Fujioka; H. Kumigashira

doi:10.1063/1.4908570

Determination of band diagram for a p-n junction between Mott insulator LaMnO₃ and band insulator Nb:SrTiO₃

M. Kitamura, M. Kobayashi, E. Sakai, R. Takahashi, M. Lippmaa, K. Horiba, H. Fujioka, H. Kumigashira

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO₃ and the n-type semiconductor Nb-doped SrTiO₃ (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (V_bn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of V_bn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

本文言語	English
論文番号	061605
ジャーナル	Applied Physics Letters
巻	106
号	6
DOI	https://doi.org/10.1063/1.4908570
出版ステータス	Published - 2015 2 9
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.4908570

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引用スタイル

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AU - Kitamura, M.

AU - Kobayashi, M.

AU - Sakai, E.

AU - Takahashi, R.

AU - Lippmaa, M.

AU - Horiba, K.

AU - Fujioka, H.

AU - Kumigashira, H.

PY - 2015/2/9

Y1 - 2015/2/9

N2 - The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

AB - The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

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