Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

M. Kitamura, M. Kobayashi, E. Sakai, R. Takahashi, M. Lippmaa, K. Horiba, H. Fujioka, H. Kumigashira

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

本文言語English
論文番号061605
ジャーナルApplied Physics Letters
106
6
DOI
出版ステータスPublished - 2015 2 9
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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