Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements

A. Fukuyama, Y. Akashi, M. Suemitsu, T. Ikari

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

To clarify the mechanism of the dip and hump during the photoquenching process observed in the time-dependent piezoelectric photoacoustic (PPA) signal, the PPA spectra were measured by changing the illumination time of the quenching-light of 1.12 eV at 80 K. It was found that a distinctive peak appeared around 1.1 eV and moved to higher photon energy side with increasing the illumination time. A contribution of the deep level that changes the activation energy during the photoquenching process is considered.

本文言語English
ページ(範囲)255-259
ページ数5
ジャーナルJournal of Crystal Growth
210
1
DOI
出版ステータスPublished - 2000 3 1
イベント8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
継続期間: 1999 9 151999 9 18

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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