Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

Kenichi Ohhata, Tonu Masuda, Eiji Ohue, Katsuyoshi Washio

研究成果: Article

24 引用 (Scopus)

抜粋

A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.

元の言語English
ページ(範囲)1290-1297
ページ数8
ジャーナルIEEE Journal of Solid-State Circuits
34
発行部数9
DOI
出版物ステータスPublished - 1999 9
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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