Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

Kosuke Wakita; Eiichi Sano; Masayuki Ikebe; Stevanus Arnold; Taiichi Otsuji; Yuma Takida; Hiroaki Minamide

doi:10.1142/S0129156416400140

Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

Kosuke Wakita, Eiichi Sano, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida, Hiroaki Minamide

電気通信研究所・ブロードバンド工学研究部門

研究成果: Article › 査読

抄録

A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 ìm) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz^1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz^1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.

本文言語	English
論文番号	1640014
ジャーナル	International Journal of High Speed Electronics and Systems
巻	25
号	3-4
DOI	https://doi.org/10.1142/S0129156416400140
出版ステータス	Published - 2016 9月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1142/S0129156416400140

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title = "Design and fabrication of terahertz detectors based on 180-nm CMOS process technology",

abstract = "A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 {\`i}m) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.",

keywords = "CMOS, NEP, THz, detector, direct detection, envelope detection, imaging, microstrip antenna, on-chip patch antenna, responsivity, terahertz",

author = "Kosuke Wakita and Eiichi Sano and Masayuki Ikebe and Stevanus Arnold and Taiichi Otsuji and Yuma Takida and Hiroaki Minamide",

note = "Publisher Copyright: {\textcopyright} 2016 World Scientific Publishing Company.",

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T1 - Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

AU - Wakita, Kosuke

AU - Sano, Eiichi

AU - Ikebe, Masayuki

AU - Arnold, Stevanus

AU - Otsuji, Taiichi

AU - Takida, Yuma

AU - Minamide, Hiroaki

PY - 2016/9/1

Y1 - 2016/9/1

N2 - A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 ìm) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.

AB - A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 ìm) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.

KW - CMOS

KW - NEP

KW - THz

KW - detector

KW - direct detection

KW - envelope detection

KW - imaging

KW - microstrip antenna

KW - on-chip patch antenna

KW - responsivity

KW - terahertz

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JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

SN - 0129-1564

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M1 - 1640014

ER -

Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

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