Design and fabrication of terahertz detectors based on 180-nm CMOS process technology

Kosuke Wakita, Eiichi Sano, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida, Hiroaki Minamide

研究成果: Article査読

抄録

A CMOS cascode amplifier, biased near the threshold voltage of a MOSFET, for terahertz direct detection is proposed. A CMOS terahertz imaging circuit (size: 250 × 180 ìm) is designed and fabricated on the basis of low-cost 180-nm CMOS process technology. The imaging circuit consists of a microstrip patch antenna, an impedance-matching circuit, and a direct detector. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz1/2 at a modulation frequency of 31 Hz. NEP is estimated to be reduced to 42 pW/Hz1/2 at 100 kHz. These results suggest that cost-efficient terahertz imaging is possible in the near future.

本文言語English
論文番号1640014
ジャーナルInternational Journal of High Speed Electronics and Systems
25
3-4
DOI
出版ステータスPublished - 2016 9 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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