The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2012 4 6|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics