Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy

M. Minohara, K. Horiba, H. Kumigashira, E. Ikenaga, M. Oshima

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The authors report on the potential profiling in depth for promising oxide heterojunctions: La 0.6Sr 0.4MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) having different interfacial terminating layer and SrRuO 3/Nb:STO heterojunctions. The precise depth-profiling analysis of LSMO/TiO 2-Nb:STO interfaces with -La 0.6Sr 0.4O/TiO 2/SrO- structure reveals the existence of a certain thin depletion layer of 1-2 nm with an abrupt potential drop near the interface. In contrast, the ideal depletion layer is formed for other interfaces with a -SrO/TiO 2/SrO- terminating layer. These results suggest that the adjacency of TiO 2 layer with La 0.6Sr 0.4O donor layers at the interface is responsible for the formation of the thin depletion layer near the interface.

本文言語English
論文番号165108
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
85
16
DOI
出版ステータスPublished - 2012 4 6
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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