Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima, S. Itou

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

Growth of highly crystalline poly-Si films on polyethylene terephthalate (PET) substrates at 150°C has been achieved with practical growth rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2, and no inert gases such as He were used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. By using this technique we have succeeded in growth of poly-Si thin film on the glass substrate at 180°C with virtually no incubation layers. Good crystallinity of the poly-Si thin films were observed by Raman scattering spectroscopy and cross-sectional transmission electron microscopy. copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルThin Film Transistor Technology
出版社Electrochemical Society Inc.
ページ119-124
ページ数6
8
ISBN(電子版)1566775086
DOI
出版ステータスPublished - 2006
外部発表はい
イベントThin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico
継続期間: 2006 10 292006 11 3

出版物シリーズ

名前ECS Transactions
番号8
3
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherThin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting
国/地域Mexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Deposition of highly crystallized poly-Si thin films on polymer substrates using pulsed-plasma CVD under near-atmospheric pressure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル