The deposition mechanism and electrical characteristics of CVD polysilicon are investigated experimentally and theoretically. For polysilicon deposition using pyrolysis of SiH//4, it is thought that: (i) surface reaction of SiH//4 proceeds at adsorption sites composed of dangling bonds on the polysilicon, and (ii) the number of active adsorption sites is related to the Fermi level in polysilicon. Impurity doping during deposition is explained, assuming impurity atom diffusion in the stagnant layer formed by gas stream and incorporation of impurity atoms into polysilicon in accordance with Henry's law. The electrical characteristics of polysilicon are explained assuming that impurity atoms are electrically inactive in the disordered region at grain boundaries, and it is also thought that As-doped polysilicon has a higher grain-boundary barrier resistance than P-doped polysilicon.
|ジャーナル||Japan Annual Reviews in Electronics, Computers & Telecommunications|
|出版ステータス||Published - 1984 12 1|
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