Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors

Tae Hun Shim, Seong Je Kim, Gon Sub Lee, Kwan Su Kim, Won Ju Cho, Jea Gun Park

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We investigated the dependence of temperature and self-heating on electron mobility in ultrathin body fully depleted silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors as a function of silicon thickness by analyzing their electron states and electrical characteristics. We found that as the temperature increases, electron mobility decreases regardless of the silicon thickness. We also found that there is a less decrease when the silicon thickness is less than 3 nm than when it is greater than 3 nm. This is because there is a greater electron occupancy in a twofold valley. We demonstrated that the quantum size-effect, i.e., the higher electron mobility in silicon with a thickness less than 3 nm caused by the size-effect, can be eliminated by self-heating.

本文言語English
論文番号094522
ジャーナルJournal of Applied Physics
103
9
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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