Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors

We investigated the dependence of temperature and self-heating on electron mobility in ultrathin body fully depleted silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors as a function of silicon thickness by analyzing their electron states and electrical characteristics. We found that as the temperature increases, electron mobility decreases regardless of the silicon thickness. We also found that there is a less decrease when the silicon thickness is less than 3 nm than when it is greater than 3 nm. This is because there is a greater electron occupancy in a twofold valley. We demonstrated that the quantum size-effect, i.e., the higher electron mobility in silicon with a thickness less than 3 nm caused by the size-effect, can be eliminated by self-heating.