Perpendicular magnetic anisotropy (PMA) in Co 20Fe 60B 20 films depending on the adjacent layers of Ta, Ru, and MgO was studied for reduction of switching current density J c0 in in-plane magnetic tunnel junctions (MTJs). A MgO layer reduces the out-of-plane saturation field (H s) of in-plane easy axis Co 20Fe 60B 20 films by inducing a strong PMA at the Co 20Fe 60B 20/MgO interface. The PMA is not affected much by the crystallinity in Co 20Fe 60B 20 films with different capping layers. MTJ with a MgO capping layer shows a lower J c0 than that with a Ru capping layer, in accordance with the reduction of H s.
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