Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Dependence of interface-state density (Dit) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in Dit was observed with decreasing the width of the fin structure.

本文言語English
ホスト出版物のタイトルULSI Process Integration 7
出版社Electrochemical Society Inc.
ページ293-298
ページ数6
7
ISBN(電子版)9781607682615
ISBN(印刷版)9781566779074
DOI
出版ステータスPublished - 2011
イベント7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
継続期間: 2011 10月 92011 10月 14

出版物シリーズ

名前ECS Transactions
番号7
41
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
国/地域United States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • 工学(全般)

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