Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs

Kwan Su Kim, Sang Mo Koo, Won Ju Cho

研究成果: Article査読

抄録

We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.

本文言語English
ページ(範囲)206-208
ページ数3
ジャーナルJournal of Electroceramics
23
2-4
DOI
出版ステータスPublished - 2009 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料力学
  • 電子工学および電気工学
  • 材料化学

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