Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs

Kwan Su Kim, Sang Mo Koo, Won Ju Cho

研究成果: Article

抜粋

We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.

元の言語English
ページ(範囲)206-208
ページ数3
ジャーナルJournal of Electroceramics
23
発行部数2-4
DOI
出版物ステータスPublished - 2009 10 1
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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