Dependence of gate oxide breakdown frequency on ion current density distributions during electron cyclotronresonance plasma etching

研究成果: Article査読

16 被引用数 (Scopus)

抄録

According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored charge during magnetized high-density plasma etching becomes a serious problem. Thegate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the unevenmagnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the gate oxide degradation during electron cyclotron resonance (ECR) plasma etching.

本文言語English
ページ(範囲)L1902-L1904
ジャーナルJapanese journal of applied physics
30
11A
DOI
出版ステータスPublished - 1991 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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