抄録
Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.
本文言語 | English |
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ページ(範囲) | 563-567 |
ページ数 | 5 |
ジャーナル | Advanced Metallization Conference (AMC) |
出版ステータス | Published - 2006 3月 23 |
外部発表 | はい |
イベント | 22nd Annual Advanced Metallization Conference, AMC 2005 - Colorado, Springs, CO, United States 継続期間: 2005 9月 27 → 2005 9月 29 |
ASJC Scopus subject areas
- 化学工学(全般)