Deoxidization of CU Oxide under extremely low oxygen pressure ambient

Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mino, Eishi Gofuku, Eiichi Suzuki

研究成果: Conference article査読

抄録

Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

本文言語English
ページ(範囲)563-567
ページ数5
ジャーナルAdvanced Metallization Conference (AMC)
出版ステータスPublished - 2006 3 23
外部発表はい
イベント22nd Annual Advanced Metallization Conference, AMC 2005 - Colorado, Springs, CO, United States
継続期間: 2005 9 272005 9 29

ASJC Scopus subject areas

  • 化学工学(全般)

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