Deoxidization of CU Oxide under extremely low oxygen pressure ambient

Kazuhiko Endo; Naoki Shirakawa; Yoshiyuki Yoshida; Shin Ichi Ikeda; Tetsuya Mino; Eishi Gofuku; Eiichi Suzuki

Deoxidization of CU Oxide under extremely low oxygen pressure ambient

Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mino, Eishi Gofuku, Eiichi Suzuki

研究成果: Conference article › 査読

抄録

Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10^-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

本文言語	English
ページ（範囲）	563-567
ページ数	5
ジャーナル	Advanced Metallization Conference (AMC)
出版ステータス	Published - 2006 3月 23
外部発表	はい
イベント	22nd Annual Advanced Metallization Conference, AMC 2005 - Colorado, Springs, CO, United States 継続期間: 2005 9月 27 → 2005 9月 29

ASJC Scopus subject areas

化学工学（全般）

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引用スタイル

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title = "Deoxidization of CU Oxide under extremely low oxygen pressure ambient",

abstract = "Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.",

author = "Kazuhiko Endo and Naoki Shirakawa and Yoshiyuki Yoshida and Ikeda, {Shin Ichi} and Tetsuya Mino and Eishi Gofuku and Eiichi Suzuki",

year = "2006",

month = mar,

day = "23",

language = "English",

pages = "563--567",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

note = "22nd Annual Advanced Metallization Conference, AMC 2005 ; Conference date: 27-09-2005 Through 29-09-2005",

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TY - JOUR

T1 - Deoxidization of CU Oxide under extremely low oxygen pressure ambient

AU - Endo, Kazuhiko

AU - Shirakawa, Naoki

AU - Yoshida, Yoshiyuki

AU - Ikeda, Shin Ichi

AU - Mino, Tetsuya

AU - Gofuku, Eishi

AU - Suzuki, Eiichi

PY - 2006/3/23

Y1 - 2006/3/23

N2 - Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

AB - Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

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UR - http://www.scopus.com/inward/citedby.url?scp=33644958563&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644958563

SP - 563

EP - 567

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

SN - 1540-1766

T2 - 22nd Annual Advanced Metallization Conference, AMC 2005

Y2 - 27 September 2005 through 29 September 2005

ER -

Deoxidization of CU Oxide under extremely low oxygen pressure ambient

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