Demonstration of split-gate type trigate flash memory with highly suppressed over-erase

Takahiro Kamei; Yongxun Liu; Takashi Matsukawa; Kazuhiko Endo; Shinichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Tetsuro Hayashida; Kunihiro Sakamoto; Atsushi Ogura; Meishoku Masahara

doi:10.1109/LED.2011.2181322

Demonstration of split-gate type trigate flash memory with highly suppressed over-erase

Takahiro Kamei, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, Meishoku Masahara

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V _t) variations before and after nor-mode program/erase cycle have systematically been compared with the stack-gate ones. It was experimentally found that split-gate type cell transistors with the same control gate length (L _CG) of 176 nm show much smaller V _t distribution after erase compared to those of stack-gate ones. Moreover, the measured source-drain breakdown voltage (BV _DS) is higher than 3.1 V even the L _CG was down to 76 nm. This indicates that the developed split-gate type trigate flash memory is very effective for scaled nor-type flash memory with highly suppressed over-erase.

本文言語	English
論文番号	6145732
ページ（範囲）	345-347
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	33
号	3
DOI	https://doi.org/10.1109/LED.2011.2181322
出版ステータス	Published - 2012 3月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/LED.2011.2181322

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title = "Demonstration of split-gate type trigate flash memory with highly suppressed over-erase",

abstract = "The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V t) variations before and after nor-mode program/erase cycle have systematically been compared with the stack-gate ones. It was experimentally found that split-gate type cell transistors with the same control gate length (L CG) of 176 nm show much smaller V t distribution after erase compared to those of stack-gate ones. Moreover, the measured source-drain breakdown voltage (BV DS) is higher than 3.1 V even the L CG was down to 76 nm. This indicates that the developed split-gate type trigate flash memory is very effective for scaled nor-type flash memory with highly suppressed over-erase.",

keywords = "Flash memory, over-erase, split gate, trigate",

author = "Takahiro Kamei and Yongxun Liu and Takashi Matsukawa and Kazuhiko Endo and Shinichi O'Uchi and Junichi Tsukada and Hiromi Yamauchi and Yuki Ishikawa and Tetsuro Hayashida and Kunihiro Sakamoto and Atsushi Ogura and Meishoku Masahara",

note = "Funding Information: Manuscript received September 26, 2011; revised December 13, 2011; accepted December 17, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Nanotechnology Project of NEDO Japan. The review of this letter was arranged by Editor T. Wang. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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doi = "10.1109/LED.2011.2181322",

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AU - Kamei, Takahiro

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AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'Uchi, Shinichi

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Hayashida, Tetsuro

AU - Sakamoto, Kunihiro

AU - Ogura, Atsushi

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received September 26, 2011; revised December 13, 2011; accepted December 17, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Nanotechnology Project of NEDO Japan. The review of this letter was arranged by Editor T. Wang. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/3

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N2 - The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V t) variations before and after nor-mode program/erase cycle have systematically been compared with the stack-gate ones. It was experimentally found that split-gate type cell transistors with the same control gate length (L CG) of 176 nm show much smaller V t distribution after erase compared to those of stack-gate ones. Moreover, the measured source-drain breakdown voltage (BV DS) is higher than 3.1 V even the L CG was down to 76 nm. This indicates that the developed split-gate type trigate flash memory is very effective for scaled nor-type flash memory with highly suppressed over-erase.

AB - The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V t) variations before and after nor-mode program/erase cycle have systematically been compared with the stack-gate ones. It was experimentally found that split-gate type cell transistors with the same control gate length (L CG) of 176 nm show much smaller V t distribution after erase compared to those of stack-gate ones. Moreover, the measured source-drain breakdown voltage (BV DS) is higher than 3.1 V even the L CG was down to 76 nm. This indicates that the developed split-gate type trigate flash memory is very effective for scaled nor-type flash memory with highly suppressed over-erase.

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KW - over-erase

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KW - trigate

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Demonstration of split-gate type trigate flash memory with highly suppressed over-erase

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