Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask

Mitsunori Toyoda, Kenjiro Yamasoe, Akifumi Tokimasa, Kentaro Uchida, Tetsuo Harada, Tsuneo Terasawa, Tsuyoshi Amano, Takeo Watanabe, Mihiro Yanagihara, Hiroo Kinoshita

    研究成果: Article査読

    10 被引用数 (Scopus)

    抄録

    To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm.

    本文言語English
    論文番号102502
    ジャーナルApplied Physics Express
    7
    10
    DOI
    出版ステータスPublished - 2014 10 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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