Degradation of Se-doped GaAs0.6P0.4 Light-emitting diodes

Tadashige Sato, Megumi Imai

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The rapid degradation of Se-doped GaAs0.6P0.4 light-emitting diodes is of prime importance in reliability studies of optical devices using III-V compound semiconductors. Marked changes are observed at the junction of Se-doped GaAs0.6P0.4 light-emitting diodes, because they degrade rapidly, in contrast to Te-doped GaAs0.6P0.4 light-emitting diodes, which degrade gradually. Here, this rapid degradation is investigated using aging tests under various conditions by a capacitance-voltage method and deep-level transient spectroscopy. We discuss the differences in the degradation mechanisms for the two diodes and propose a model for the rapid degradation.

本文言語English
ページ(範囲)490-495
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
2 A
DOI
出版ステータスPublished - 2002 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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