Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.
|出版ステータス||Published - 1998 12月 1|
|イベント||Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz|
継続期間: 1998 8月 24 → 1998 8月 27
|Other||Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)|
|Period||98/8/24 → 98/8/27|
ASJC Scopus subject areas