Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

Yasuki Okuno, Shuichi Okuda, Masafumi Akiyoshi, Takashi Oka, Shirou Kawakita, Mitsuru Imaizumi, Hiroaki Kusawake, Kan Hua Lee, Masafumi Yamaguchi

研究成果: Conference contribution

抄録

InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.

本文言語English
ホスト出版物のタイトル2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ845-848
ページ数4
ISBN(電子版)9781509056057
DOI
出版ステータスPublished - 2017
外部発表はい
イベント44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
継続期間: 2017 6月 252017 6月 30

出版物シリーズ

名前2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
国/地域United States
CityWashington
Period17/6/2517/6/30

ASJC Scopus subject areas

  • 再生可能エネルギー、持続可能性、環境
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル