Degradation and breakdown of W-La2O3 stack after annealing in N2

Joel Molina, Alfonso Torres, Wilfrido Calleja, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W-La2O3 stacked structures. It is shown that the gate area of the metal-insulator-semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current-voltage (I-V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.

本文言語English
ページ(範囲)7076-7080
ページ数5
ジャーナルJapanese journal of applied physics
47
9 PART 1
DOI
出版ステータスPublished - 2008 9 12
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Degradation and breakdown of W-La<sub>2</sub>O<sub>3</sub> stack after annealing in N<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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