Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam

A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. F. Chichibu, H. Koinuma

研究成果: Article査読

106 被引用数 (Scopus)

抄録

The characterization of zinc oxide (ZnO) thin films grown on ScAlMgO4 substrates by mean of positron annihilation was reported. The photoluminescence spectra and Doppler braodening spectra of annihilation radiation for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO was measured. It was found that the monoenergetic positron beam technique can be used to characterize ZnO thin films grown by molecular beam epitaxy (MBE).

本文言語English
ページ(範囲)2481-2485
ページ数5
ジャーナルJournal of Applied Physics
93
5
DOI
出版ステータスPublished - 2003 3 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Defects in ZnO thin films grown on ScAlMgO<sub>4</sub> substrates probed by a monoenergetic positron beam」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル