Defects in ga+ ion implanted gaas-alas mqw structures

Yoshifumi Suzuki, Yoshiro Hirayama, Hiroshi Okamoto

研究成果: Article

5 引用 (Scopus)

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Cross-sectional transmission electron microscope observation was performed on GaAs-AlAs multi-quantum-well (MQW) structures which were compositionally disordered by ion implantation of the constituent element Ga+ and subsequent heat-treatment, and compared with MQW structures implanted by other species of ions As+, Si+ and Ar+. It was found that most of the defects introduced by ion implantation of Ga+ are annealed out by heat treatment at 750°C for 60 minutes, and that this is also the case for defects introduced by ion implantation by another constituent element As+, while many of the defects introduced by Si+ and Ar+ ion implantation remain without being annealed out.

元の言語English
ページ(範囲)L912-L915
ジャーナルJapanese journal of applied physics
25
発行部数11 A
DOI
出版物ステータスPublished - 1986 11
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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