Defects generation and annihilation in GaN grown on patterned silicon substrate

N. Sawaki, S. Ito, T. Nakagit, H. Iwat, T. Tanikawa, M. Irie, Y. Honda, M. Yamaguchi, H. Amano

研究成果: Conference contribution

抄録

The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.

本文言語English
ホスト出版物のタイトルGallium Nitride Materials and Devices VIII
DOI
出版ステータスPublished - 2013
イベントSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
継続期間: 2013 2月 42013 2月 7

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8625
ISSN(印刷版)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
国/地域United States
CitySan Francisco, CA
Period13/2/413/2/7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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