Defect states in Lu3GaxAl5- xO12 crystals and powders

E. Mihokova, A. Vedda, M. Fasoli, F. Moretti, A. L. Bulin, M. Nikl, M. Bettinelli, A. Speghini, H. Ogino, A. Yoshikawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We study defect states in undoped and Eu3+-doped Lu 3GaxAl5-xO12 (x = 0-5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 °C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol-gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown.

本文言語English
ページ(範囲)1298-1301
ページ数4
ジャーナルOptical Materials
32
10
DOI
出版ステータスPublished - 2010 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 分光学
  • 物理化学および理論化学
  • 有機化学
  • 無機化学
  • 電子工学および電気工学

フィンガープリント

「Defect states in Lu<sub>3</sub>Ga<sub>x</sub>Al<sub>5-</sub> <sub>x</sub>O<sub>12</sub> crystals and powders」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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