抄録
We study defect states in undoped and Eu3+-doped Lu 3GaxAl5-xO12 (x = 0-5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 °C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol-gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown.
本文言語 | English |
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ページ(範囲) | 1298-1301 |
ページ数 | 4 |
ジャーナル | Optical Materials |
巻 | 32 |
号 | 10 |
DOI | |
出版ステータス | Published - 2010 8月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 分光学
- 物理化学および理論化学
- 有機化学
- 無機化学
- 電子工学および電気工学