Defect creation in diamond by hydrogen plasma treatment at room temperature

Y. Yamazaki, K. Ishikawa, S. Samukawa, S. Yamasaki

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.

本文言語English
ページ(範囲)327-330
ページ数4
ジャーナルPhysica B: Condensed Matter
376-377
1
DOI
出版ステータスPublished - 2006 4 1
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 2005 7 242005 7 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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