Defect control of conventional and anomalous electron transport at complex oxide interfaces

F. Gunkel, Chris Bell, Hisashi Inoue, Bongju Kim, Adrian G. Swartz, Tyler A. Merz, Yasuyuki Hikita, Satoshi Harashima, Hiroki K. Sato, Makoto Minohara, Susanne Hoffmann-Eifert, Regina Dittmann, Harold Y. Hwang

研究成果: Article査読

46 被引用数 (Scopus)

抄録

Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO3=SrTiO3 (100) interfaces. Field-dependent Hall characteristics (2-300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. The most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.

本文言語English
論文番号031035
ジャーナルPhysical Review X
6
3
DOI
出版ステータスPublished - 2016
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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