Defect activation in willemite-type Zn2GeO4 by nanocrystallization

Yoshihiro Takahashi; Masataka Ando; Kenichiro Iwasaki; Hirokazu Masai; Takumi Fujiwara

doi:10.1063/1.3481081

Defect activation in willemite-type Zn₂GeO₄ by nanocrystallization

Yoshihiro Takahashi, Masataka Ando, Kenichiro Iwasaki, Hirokazu Masai, Takumi Fujiwara

工学研究科・応用物理学専攻

研究成果: Article › 査読

22 被引用数 (Scopus)

抄録

We demonstrated the selective introduction of interstitial Zn defects (Zn i) into willemite-type semiconductive Zn₂GeO₄ by nanocrystallization of 15Li₂O-15ZnO-70GeO₂ glass. The resulting nanocrystallized glass consisting of Zn₂GeO₄ exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zn_i^̇ is produced by capturing a zinc ion through six-membered rings of the Zn₂GeO₄ phase during nanocrystallization and the excess Zn_i^̇ acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.

本文言語	English
論文番号	071906
ジャーナル	Applied Physics Letters
巻	97
号	7
DOI	https://doi.org/10.1063/1.3481081
出版ステータス	Published - 2010 8 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.3481081

フィンガープリント「Defect activation in willemite-type Zn<sub>2</sub>GeO<sub>4</sub> by nanocrystallization」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

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abstract = "We demonstrated the selective introduction of interstitial Zn defects (Zn i) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O-15ZnO-70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zn{\.i} is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zn{\.i} acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.",

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AU - Fujiwara, Takumi

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