Deep trapping states in cerium doped (Lu,Y,Gd)3(Ga,Al) 5O12 single crystal scintillators

E. Mihóková, K. Vávrů, K. Kamada, V. Babin, A. Yoshikawa, M. Nikl

研究成果: Article査読

36 被引用数 (Scopus)

抄録

We study deep trapping states in Ce3+-doped garnet crystals with the composition (Lu,Y,Gd)3(Ga,Al)5O12, recently shown as having remarkably high light yield. We use thermally stimulated luminescence (TSL) technique above room temperature and determine the composition Gd3Ga3Al2O12 as the host showing the lowest concentration of traps. This host consistently manifests very low afterglow comparable to that of the standard BGO crystal. We also perform TSL glow peak analysis based on the initial rise technique to evaluate trap depth and other characteristics associated with TSL peaks.

本文言語English
ページ(範囲)98-101
ページ数4
ジャーナルRadiation Measurements
56
DOI
出版ステータスPublished - 2013

ASJC Scopus subject areas

  • 放射線
  • 器械工学

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