Deep reactive ion etching of Pyrex glass using SF6 plasma

Xinghua Li, Takashi Abe, Masayoshi Esashi

研究成果: Article査読

183 被引用数 (Scopus)

抄録

Deep reactive ion etching of Pyrex glass has been characterized in sulfur hexafluoride plasma (SF6). High etch rate (approx. 0.6 μm/min) was demonstrated under a condition of low pressure (0.2 Pa) and high self-bias (-390 V) by using a magnetically enhanced inductively coupled plasma reactive ion etching. Vertical etch profile (taper angle approx. 88°), high aspect ratio (> 10) and through-wafer etching of Pyrex glass (200 μm in thickness) were achieved under the condition by using thick (20 μm) and vertical electroplated nickel film as mask. The vertical etch profile was achieved when the mask opening is narrower than 20 μm because the deposition of nonvolatile product on the sidewall is reduced. A novel etching technique 'scoop-out etching' was demonstrated by using the present etching characteristics.

本文言語English
ページ(範囲)139-145
ページ数7
ジャーナルSensors and Actuators, A: Physical
87
3
DOI
出版ステータスPublished - 2001 1 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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