Deep level in InP crystal grown by the horizontal bridgman method under controlled phosphorus vapor pressure

Atsushi Shimizu, Jun Ichi Nishizawa, Yutaka Oyama, Ken Suto

研究成果: Article

3 引用 (Scopus)

抜粋

InP crystals were grown by the horizontal Bridgman (HB) method under a controlled ambient phosphorus vapor pressure. The relationship between the phosphorus vapor pressure and crystal defects was investigated. Crystals grown under a lower phosphorus vapor pressure have an In-rich composition. P-vacancy related photoluminescence (PL) emission at 1.1 eV decreased in growth under a higher phosphorus vapor pressure. The ion density at Ec -1.1 eV also decreased according to results of photocapacitance measurement. It was considered that crystals became a P-rich composition from an In-rich one by growth under higher phosphorus vapor pressure of 23 or 29 atm. This corresponds to the results of coulometric titration analysis. In the InP crystal grown under the phosphorus pressure of 33 atm, the density of the deep level was undetectable by PL or photocapacitance measurement.

元の言語English
ページ(範囲)3863-3866
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
発行部数7 A
DOI
出版物ステータスPublished - 2000

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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