Deep-acceptor-mediated photoquenching of the midgap donor EL2 in semi-insulating GaAs

Maki Suemitsu, Hidenori Takahashi, Nobuo Miyamoto

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The effects of lowering the temperature and/or adding shallow acceptors in semi-insulating GaAs on the photoquenching effect of the midgap donor EL2 have been extensively studied. Measurements were made on the near-infrared photoabsorption and the photocurrent at T=8.6-130 K for various samples containing different concentrations of carbon acceptors ranging from 1.8×1015 to 14.3×1015 cm-3. The results indicate a strong influence of the two parameters on the photoquenching; the photoquenching was more enhanced both at lower quenching temperatures and at higher carbon concentrations. The results were consistently explained by assuming a deep-acceptor level located at Ev+(70-80) meV, which triggers the onset of EL2 photoquenching when it is neutral, while it triggers the onset of EL2 photorecovery when it is negatively ionized.

本文言語English
ページ(範囲)1666-1673
ページ数8
ジャーナルPhysical Review B
52
3
DOI
出版ステータスPublished - 1995
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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