Decreased hydrogen content in diamond-like carbon grown by CH4/Ar photoemission-assisted plasma chemical vapor deposition with CO2 gas

Shuichi Ogawa, Rintaro Sugimoto, Nobuhisa Kamata, Yuji Takakuwa

研究成果: Article査読

3 被引用数 (Scopus)

抄録

In this study, we tried to decrease the hydrogen content in diamond-like carbon (DLC) grown by photoemission-assisted plasma enhanced chemical vapor deposition (PA-PECVD) using Ar/CH4 mixed with CO2. When the CO2 flux was changed from 0 to 10 sccm with the Ar and CH4 fluxes maintained at 50 and 10 sccm, respectively, the growth rate decreased from 11 to 3 μm/h. Secondary mass spectroscopy measurements confirmed that the amount of O mixed into the DLC was increased through incorporation of CO2 into feed gas flow. The O concentration in the DLC was quantitatively evaluated by X-ray photoelectron spectroscopy (XPS) to be 0.6 atomic % at a CO2 flow ratio of 14%. Raman spectroscopy and XPS revealed that the amount of H trapped in the DLC decreased as the CO2 flow ratio was increased and the sp3/sp2 ratio remained almost unchanged. These results were interpreted by a model involving O radicals acting on the DLC surface associated with CO/CO2 and H2O, resulting in a decrease of the growth rate and H content. A portion of the O radicals also became incorporated into the DLC as C–O–C bonds.

本文言語English
ページ(範囲)863-867
ページ数5
ジャーナルSurface and Coatings Technology
350
DOI
出版ステータスPublished - 2018 9 25

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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