Decomposition of 1/f noise in AlxGa1-xAs/GaAs hall devices

Jens Müller, Stephan Von Molnár, Yuzo Ohno, Hideo Ohno

研究成果: Article査読

30 被引用数 (Scopus)

抄録

We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from AlxGa1-xAs/GaAs heterostructures. In a sample with feature size as small as 0.45μm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped AlxGa1-xAs layer is resolved into a single Lorentzian spectrum.

本文言語English
論文番号186601
ジャーナルPhysical Review Letters
96
18
DOI
出版ステータスPublished - 2006 5月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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