Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass

Motoshi Ohama, Takumi Fujiwara, Akira J. Ikushima

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We report quantitative measurements on the decay of optical absorption at various elevated temperatures in ultraviolet (UV)-irradiated SiO2 glasses doped with Ge. From the Arrhenius plots of decay time constants, the activation energy of the GeE center in the UV-irradiated glasses has been determined to be 2.4±0.3eV, while the reported activation energy of GeE decay in UV-poled glasses is 0.4±0.1eV. The present experimental results strongly suggest that the decay process of the GeE center induced in UV-irradiated glasses is quite different from that in UV-poled glasses.

本文言語English
ページ(範囲)1481-1483
ページ数3
ジャーナルApplied Physics Letters
73
11
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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