We have performed de Haas-van Alphen effect measurements on V3Si in both normal and mixed states. The oscillations with many frequency components observed in the normal state considerably differ from previously reported ones. We discuss this discrepancy in terms of domain structures formed at the martensitic transition of V3Si. The field dependence of the oscillation amplitude is determined.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering