de Haas-van Alphen Effect of CeSb under Pressure

Masahiro Takashita, Haruyoshi Aoki, Christopher John Haworth, Takehiko Matsumoto, Taichi Terashima, Shinya Uji, Chieko Terakura, Takahiro Miura, Akihiro Uesawa, Takashi Suzuki

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We report a de Haas-van Alphen effect study of CeSb in the high-field ferromagnetic (F) and intermediate-field antiferromagnetic (AFF1) phases. In the F phase, the frequencies of the electron surfaces increase monotonically with pressure. On the other hand, the frequency of one particular hole surface increases with pressure, while those of the other hole surfaces decrease sligthly. The effective masses of all the hole surfaces increase similarly with pressure while those of the electron surfaces change little. In the AFF1 phase, other hole surfaces than the particular one have qualitatively different pressure dependence from that in the F phase. The frequency changes both in the F and AFF1 phases can be explained by taking the anisotropic P-f mixing model into account. However, it is difficult to understand the changes of the effective masses in terms of the f content expected for the p-f mixing model.

本文言語English
ページ(範囲)3859-3866
ページ数8
ジャーナルjournal of the physical society of japan
67
11
DOI
出版ステータスPublished - 1998 11

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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