De Haas-van Alphen effect in GdAs

Y. Nakanishi, F. Takahashi, T. Sakon, M. Yoshida, D. X. Li, T. Suzuki, M. Motokawa

研究成果: Conference article

8 引用 (Scopus)

抜粋

We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.

元の言語English
ページ(範囲)750-751
ページ数2
ジャーナルPhysica B: Condensed Matter
281-282
DOI
出版物ステータスPublished - 2000 6 1
イベントYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
継続期間: 1999 8 241999 8 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • これを引用

    Nakanishi, Y., Takahashi, F., Sakon, T., Yoshida, M., Li, D. X., Suzuki, T., & Motokawa, M. (2000). De Haas-van Alphen effect in GdAs. Physica B: Condensed Matter, 281-282, 750-751. https://doi.org/10.1016/S0921-4526(99)01030-3