DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

研究成果: Article査読

4 被引用数 (Scopus)

抄録

DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.

本文言語English
ページ(範囲)6-9
ページ数4
ジャーナルThin Solid Films
517
1
DOI
出版ステータスPublished - 2008 11 3
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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