Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

Akira Wada, Koki Igarashi, Takeru Okada, Seiji Samukawa

研究成果: Conference contribution

抄録

Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.

本文言語English
ホスト出版物のタイトル2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
ページ917-920
ページ数4
DOI
出版ステータスPublished - 2013
イベント2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
継続期間: 2013 8 52013 8 8

出版物シリーズ

名前Proceedings of the IEEE Conference on Nanotechnology
ISSN(印刷版)1944-9399
ISSN(電子版)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13/8/513/8/8

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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