Damage-free ultradiluted HF/nitrogen jet spray cleaning for particle removal with minimal silicon and oxide loss

Hideki Hirano, Kou Sato, Tsutomu Osaka, Hitoshi Kuniyasu, Takeshi Hattori

研究成果: Article査読

25 被引用数 (Scopus)

抄録

There has been a trade-off between efficient particle removal and damage minimization to fragile device structures when using mixed-liquid/gas jet spray cleaning of silicon wafers. We have developed an ultradiluted HF/nitrogen jet spray cleaning procedure for single-wafer spin-cleaning, which can efficiently remove particles on both silicon and silicon-dioxide surfaces even at a low nitrogen flow rate without causing damage to fragile 45-nm polysilicon gate structures in a short period. The use of ultradiluted HF can make silicon and oxide loss negligible, below 0.003 nm and 0.03 nm, respectively. This very simple single-step cleaning procedure drastically reduces chemical consumption.

本文言語English
ジャーナルElectrochemical and Solid-State Letters
9
2
DOI
出版ステータスPublished - 2006 4 10
外部発表はい

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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