Damage-free plasma etching processes for future nanoscale devices

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultra-large-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

本文言語English
論文番号4805332
ページ(範囲)112-119
ページ数8
ジャーナルProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOI
出版ステータスPublished - 2009 6 1
イベント22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
継続期間: 2009 1 252009 1 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 機械工学
  • 電子工学および電気工学

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